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| SMD Type Silicon PNP Epitaxial Type 2SC2873 Transistors Features Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A). High speed switching time: tstg = 1.0 Small flat package. PC = 1.0 to 2.0 W s (typ.). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range *1 Mounted on ceramic substrate (250 mm2 X 0.8 t) Symbol VCBO VCEO VEBO IC IB PC PC *1 Tj Tstg Rating 50 50 5 2 0.4 500 1000 150 -55 to +150 Unit V V V A A mW mW www.kexin.com.cn 1 SMD Type 2SC2873 Electrical Characteristics Ta = 25 Parameter Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Turn-on time Symbol VCEO ICBO IEBO hFE Testconditons IC = 10 mA, IB = 0 VCB = 50 V, IE = 0 VEB = 5 V, IC = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 2.0 A VCE (sat) IC = 1 A, IB = 0.05 A VBE (sat) IC = 1 A, IB = 0.05 A Cob ton VCB = 10 V, IE = 0, f = 1 MHz Transistors Min 50 Typ Max Unit V 0.1 0.1 70 20 0.5 1.2 30 0.1 240 A A V V pF s Storage time tstg 1.0 s Fall time Transition frequency tf fT VCE = 2 V, IC = 0.5 A 0.1 120 s MHz hFE Classification Marking Rank hFE MO O 70 140 MY Y 120 240 2 www.kexin.com.cn |
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